Ageing of GeTe nanowires


https://doi.org/10.4081/microscopie.2016.6310
Vol. 26 No. 2 (2016)
Submitted: 27 September 2016
Accepted: 27 September 2016
Published: 27 September 2016
TEM, Phase change memory, nanowires, ageing
Abstract Views: 552
PDF: 737
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In this paper we report a TEM study on the ageing of GeTe nanowires, for scaled phase memory devices application, when exposed to normal atmospheric conditions. Selective oxidation of Ge occurs, leading to the formation of a Ge oxide amorphous shell around the wire, with GeTe4 nanocrystals embedded within. The oxidation process takes place in a few weeks after the sample preparation, seriously endangering the device integrity and correct functioning.

Rotunno, E., Longo, M., & Lazzarini, L. (2016). Ageing of GeTe nanowires. Microscopie, 26(2), 58–63. https://doi.org/10.4081/microscopie.2016.6310

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