Quantitative evaluation of strain effects in STEM HAADF contrast


https://doi.org/10.4081/microscopie.2009.4964
Vol. 11 No. 1 (2009)
Submitted: 15 January 2015
Accepted: 15 January 2015
Published: 31 March 2009
HAADF, surface strain relaxation, channeling.
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Authors

  • V. Grillo
    grillo@tasc.infm.it
    National Research Center S3, CNR-INFM, Modena; Laboratorio Nazionale TASC INFM-CNR, Area Science Park, Trieste, Italy.
In the context of the methodological studies aimed to give a quantitative evaluation of composition basing on High Angle Annular Dark Field (HAADF) STEM imaging, I propose to afford quantitatively the effect of a strain field varying along the electron propagation direction. I propose, as a case study, the well known surface strain relaxation in a STEM specimen comprising an InGaAs- GaAs Quantum Well. I will demonstrate, by means of experiments and simulation that, surface strain relaxation produce characteristic intensity dips at the sides of the QW not ascribable to chemical effects. The origin of this contrast will be correlated with the characteristic phenomenon of channelling in zone axis conditions.

Grillo, V. (2009). Quantitative evaluation of strain effects in STEM HAADF contrast. Microscopie, 11(1), 61–68. https://doi.org/10.4081/microscopie.2009.4964

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