Ageing of GeTe nanowires
AbstractIn this paper we report a TEM study on the ageing of GeTe nanowires, for scaled phase memory devices application, when exposed to normal atmospheric conditions. Selective oxidation of Ge occurs, leading to the formation of a Ge oxide amorphous shell around the wire, with GeTe4 nanocrystals embedded within. The oxidation process takes place in a few weeks after the sample preparation, seriously endangering the device integrity and correct functioning.
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Copyright (c) 2016 E. Rotunno, M. Longo, L. Lazzarini
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