Ageing of GeTe nanowires

  • E. Rotunno | enzo.rotunno@imem.cnr.it IMEM-CNR Parma, Italy.
  • M. Longo IMM-CNR, Lab. MDM, Agrate Brianza (MB), Italy.
  • L. Lazzarini IMEM-CNR Parma, Italy.

Abstract

In this paper we report a TEM study on the ageing of GeTe nanowires, for scaled phase memory devices application, when exposed to normal atmospheric conditions. Selective oxidation of Ge occurs, leading to the formation of a Ge oxide amorphous shell around the wire, with GeTe4 nanocrystals embedded within. The oxidation process takes place in a few weeks after the sample preparation, seriously endangering the device integrity and correct functioning.

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Published
2016-09-27
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Section
Scientific Articles
Keywords:
TEM, Phase change memory, nanowires, ageing
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How to Cite
Rotunno, E., Longo, M., & Lazzarini, L. (2016). Ageing of GeTe nanowires. Microscopie, 26(2), 58-63. https://doi.org/10.4081/microscopie.2016.6310