Quantitative evaluation of strain effects in STEM HAADF contrast

  • V. Grillo | grillo@tasc.infm.it National Research Center S3, CNR-INFM, Modena; Laboratorio Nazionale TASC INFM-CNR, Area Science Park, Trieste, Italy.

Abstract

In the context of the methodological studies aimed to give a quantitative evaluation of composition basing on High Angle Annular Dark Field (HAADF) STEM imaging, I propose to afford quantitatively the effect of a strain field varying along the electron propagation direction. I propose, as a case study, the well known surface strain relaxation in a STEM specimen comprising an InGaAs- GaAs Quantum Well. I will demonstrate, by means of experiments and simulation that, surface strain relaxation produce characteristic intensity dips at the sides of the QW not ascribable to chemical effects. The origin of this contrast will be correlated with the characteristic phenomenon of channelling in zone axis conditions.

Dimensions

Altmetric

PlumX Metrics

Downloads

Download data is not yet available.
Published
2009-03-31
Info
Issue
Section
Scientific Articles
Keywords:
HAADF, surface strain relaxation, channeling.
Statistics
  • Abstract views: 393

  • PDF: 1442
How to Cite
Grillo, V. (2009). Quantitative evaluation of strain effects in STEM HAADF contrast. Microscopie, 11(1), 61-68. https://doi.org/10.4081/microscopie.2009.4964